RTF016N05TL Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET N-CH 45V 1.6A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TUMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.57 грн |
| 6000+ | 9.29 грн |
| 9000+ | 8.84 грн |
| 15000+ | 7.82 грн |
| 21000+ | 7.54 грн |
| 30000+ | 7.26 грн |
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Технічний опис RTF016N05TL Rohm Semiconductor
Description: MOSFET N-CH 45V 1.6A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V, Power Dissipation (Max): 320mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TUMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V.
Інші пропозиції RTF016N05TL за ціною від 8.88 грн до 50.61 грн
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RTF016N05TL | Виробник : Rohm Semiconductor |
Description: MOSFET N-CH 45V 1.6A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.6A, 4.5V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TUMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
на замовлення 31610 шт: термін постачання 21-31 дні (днів) |
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RTF016N05TL | Виробник : ROHM Semiconductor |
MOSFETs 2.5V Drive Nch MOSFET |
на замовлення 19291 шт: термін постачання 21-30 дні (днів) |
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| RTF016N05TL | Виробник : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 1.6A; Idm: 6.4A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 1.6A Pulsed drain current: 6.4A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |