RTL020P02TR Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: MOSFET P-CH 20V 2A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TUMT6
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
на замовлення 3853 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 60.34 грн |
| 10+ | 38.61 грн |
| 100+ | 26.53 грн |
| 500+ | 19.73 грн |
| 1000+ | 18.02 грн |
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Технічний опис RTL020P02TR Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TUMT6, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V.
Інші пропозиції RTL020P02TR
| Фото | Назва | Виробник | Інформація |
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на замовлення 200 шт: термін постачання 14-28 дні (днів) |
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RTL020P02TR | Виробник : Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TUMT6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TUMT6 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
товару немає в наявності |
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RTL020P02TR | Виробник : ROHM Semiconductor |
MOSFETs P-CH 20V 2A TUMT6 |
товару немає в наявності |