RUL035N02FRATR ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 50.18 грн |
| 10+ | 31.91 грн |
| 100+ | 18.36 грн |
| 500+ | 16.02 грн |
| 1000+ | 13.94 грн |
| 3000+ | 11.05 грн |
| 9000+ | 9.32 грн |
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Технічний опис RUL035N02FRATR ROHM Semiconductor
Description: MOSFET N-CH 20V 3.5A TUMT6, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TUMT6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції RUL035N02FRATR за ціною від 20.93 грн до 54.36 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
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RUL035N02FRATR | Rohm Semiconductor |
 Description: MOSFET N-CH 20V 3.5A TUMT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TUMT6 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 246 шт: термін постачання 21-31 дні (днів) |
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| RUL035N02FRATR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.5A TUMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TUMT6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Qualification: AEC-Q101
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 54.36 грн |
| 10+ | 32.46 грн |
| 100+ | 20.93 грн |