| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 60.40 грн |
| 10+ | 52.79 грн |
| 100+ | 35.21 грн |
| 500+ | 27.82 грн |
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Технічний опис RV4E031RPHZGTCR1 ROHM Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: DFN1616-6W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-PowerWFDFN, Packaging: Tape & Reel (TR).
Інші пропозиції RV4E031RPHZGTCR1 за ціною від 23.69 грн до 90.09 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RV4E031RPHZGTCR1 | Rohm Semiconductor |
 Description: MOSFET P-CH 30V 3.1A DFN1616-6WQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: DFN1616-6W Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerWFDFN Packaging: Cut Tape (CT) |
на замовлення 5601 шт: термін постачання 21-31 дні (днів) |
|
| RV4E031RPHZGTCR1 |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN1616-6W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN1616-6W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
на замовлення 5601 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 90.09 грн |
| 10+ | 54.37 грн |
| 100+ | 35.80 грн |
| 500+ | 26.11 грн |
| 1000+ | 23.69 грн |