RV8C010UNHZGG2CR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFET Superior Mounting Reliability, DFN1010, Nch 20V 1A, Small Signal MOSFET for Automotive.
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.41 грн |
| 10+ | 36.84 грн |
| 100+ | 22.23 грн |
| 500+ | 17.33 грн |
| 1000+ | 12.56 грн |
| 2500+ | 11.94 грн |
| 10000+ | 11.05 грн |
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Технічний опис RV8C010UNHZGG2CR ROHM Semiconductor
Description: MOSFET N-CH 20V 1A DFN1010-3W, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V, Power Dissipation (Max): 1W, Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: DFN1010-3W, Grade: Automotive, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V, Qualification: AEC-Q101.
Інші пропозиції RV8C010UNHZGG2CR за ціною від 14.73 грн до 63.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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RV8C010UNHZGG2CR | Rohm Semiconductor |
Description: MOSFET N-CH 20V 1A DFN1010-3W Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V Power Dissipation (Max): 1W Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: DFN1010-3W Grade: Automotive Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 7154 шт: термін постачання 21-31 дні (днів) |
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| RV8C010UNHZGG2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 1A DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1010-3W
Grade: Automotive
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 1A DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
Power Dissipation (Max): 1W
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: DFN1010-3W
Grade: Automotive
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Qualification: AEC-Q101
на замовлення 7154 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.68 грн |
| 10+ | 38.22 грн |
| 100+ | 25.01 грн |
| 500+ | 17.98 грн |
| 1000+ | 15.55 грн |
| 2000+ | 14.73 грн |