RV8L002SNHZGG2CR ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs Superior Mounting Reliability, DFN1010, Nch 60V 250mA, Small Signal MOSFET for Automotive.
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.94 грн |
| 13+ | 25.96 грн |
| 100+ | 17.60 грн |
| 500+ | 15.53 грн |
| 1000+ | 12.22 грн |
| 2500+ | 12.15 грн |
| 8000+ | 10.63 грн |
Відгуки про товар
Написати відгук
Технічний опис RV8L002SNHZGG2CR ROHM Semiconductor
Description: MOSFET N-CH 60V 250MA DFN1010-3W, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: DFN1010-3W, Grade: Automotive, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції RV8L002SNHZGG2CR за ціною від 14.36 грн до 63.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
RV8L002SNHZGG2CR | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA DFN1010-3W Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: DFN1010-3W Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6142 шт: термін постачання 21-31 дні (днів) |
|
| RV8L002SNHZGG2CR |
|
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: DFN1010-3W
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 250MA DFN1010-3W
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: DFN1010-3W
Grade: Automotive
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.68 грн |
| 10+ | 37.77 грн |
| 100+ | 24.43 грн |
| 500+ | 17.55 грн |
| 1000+ | 15.82 грн |
| 2000+ | 14.36 грн |