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Технічний опис RW1C025ZPT2CR ROHM Semiconductor
Description: MOSFET P-CH 20V 2.5A 6WEMT, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-WEMT, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V.
Інші пропозиції RW1C025ZPT2CR
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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RW1C025ZPT2CR | Rohm Semiconductor |
 Description: MOSFET P-CH 20V 2.5A 6WEMTPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: 6-WEMT Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
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RW1C025ZPT2CR | Rohm Semiconductor |
Description: MOSFET P-CH 20V 2.5A 6WEMT Supplier Device Package: 6-WEMT Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 700mW (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V |
товару немає в наявності |
В кошику од. на суму грн. |
| RW1C025ZPT2CR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET P-CH 20V 2.5A 6WEMT
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RW1C025ZPT2CR |
|
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 2.5A 6WEMT
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Description: MOSFET P-CH 20V 2.5A 6WEMT
Supplier Device Package: 6-WEMT
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
товару немає в наявності
В кошику
од. на суму грн.