RW4E045AJTCL1 Rohm Semiconductor

Description: NCH 30V 4.5A POWER MOSFET: RW4E0, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUFDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: DFN1616-7T.