RW4E065GNTCL1 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 76.19 грн |
| 10+ | 58.19 грн |
| 100+ | 33.62 грн |
| 500+ | 26.23 грн |
| 1000+ | 23.54 грн |
| 3000+ | 20.85 грн |
| 6000+ | 19.33 грн |
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Технічний опис RW4E065GNTCL1 ROHM Semiconductor
Description: NCH 30V 6.5A, HEML1616L7, POWER, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN1616-7T, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V.
Інші пропозиції RW4E065GNTCL1 за ціною від 32.62 грн до 119.60 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RW4E065GNTCL1 | Rohm Semiconductor |
 Description: NCH 30V 6.5A, HEML1616L7, POWERPackaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-7T Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V |
на замовлення 2437 шт: термін постачання 21-31 дні (днів) |
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| RW4E065GNTCL1 |
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Виробник: Rohm Semiconductor
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
на замовлення 2437 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.60 грн |
| 10+ | 72.62 грн |
| 100+ | 48.45 грн |
| 500+ | 35.75 грн |
| 1000+ | 32.62 грн |