RX2L10BBGC7G ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs RX2L10BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.23 грн |
| 10+ | 309.62 грн |
| 100+ | 179.49 грн |
| 500+ | 155.33 грн |
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Технічний опис RX2L10BBGC7G ROHM Semiconductor
Description: ROHM - RX2L10BBGC7G - Leistungs-MOSFET, n-Kanal, 60 V, 105 A, 1840 µohm, TO-220FM, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 105A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2.5V, euEccn: NLR, Verlustleistung: 100W, Bauform - Transistor: TO-220FM, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 1840µohm, SVHC: No SVHC (25-Jun-2025).
Інші пропозиції RX2L10BBGC7G за ціною від 154.09 грн до 434.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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RX2L10BBGC7G | Rohm Semiconductor |
Description: NCH 60V 180A, TO-220FP, POWER MO Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220FM Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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RX2L10BBGC7G | ROHM |
Description: ROHM - RX2L10BBGC7G - Leistungs-MOSFET, n-Kanal, 60 V, 105 A, 1840 µohm, TO-220FM, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 105A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 100W Bauform - Transistor: TO-220FM Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1840µohm SVHC: No SVHC (25-Jun-2025) |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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Виробник: Rohm Semiconductor
Description: NCH 60V 180A, TO-220FP, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: NCH 60V 180A, TO-220FP, POWER MO
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220FM
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 420.16 грн |
| 30+ | 230.57 грн |
| 120+ | 192.28 грн |
| 510+ | 154.09 грн |
| RX2L10BBGC7G |
|
Виробник: ROHM
Description: ROHM - RX2L10BBGC7G - Leistungs-MOSFET, n-Kanal, 60 V, 105 A, 1840 µohm, TO-220FM, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 105A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TO-220FM
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1840µohm
SVHC: No SVHC (25-Jun-2025)
Description: ROHM - RX2L10BBGC7G - Leistungs-MOSFET, n-Kanal, 60 V, 105 A, 1840 µohm, TO-220FM, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 105A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 100W
Bauform - Transistor: TO-220FM
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 1840µohm
SVHC: No SVHC (25-Jun-2025)
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 434.91 грн |
| 10+ | 347.93 грн |
| 100+ | 231.95 грн |