RX3P12BATC16 ROHM Semiconductor
Виробник: ROHM Semiconductor
MOSFETs Transistor, MOSFET Pch, -100V(Vdss), -120A(Id), (4.5V, 6.0V Drive)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 458.27 грн |
| 10+ | 324.70 грн |
| 100+ | 256.81 грн |
| 500+ | 234.03 грн |
| 1000+ | 218.15 грн |
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Технічний опис RX3P12BATC16 ROHM Semiconductor
Description: PCH -100V -120A POWER MOSFET: RX, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V, Power Dissipation (Max): 201W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V.
Інші пропозиції RX3P12BATC16 за ціною від 257.10 грн до 514.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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RX3P12BATC16 | Rohm Semiconductor |
Description: PCH -100V -120A POWER MOSFET: RX Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V Power Dissipation (Max): 201W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V |
на замовлення 375 шт: термін постачання 21-31 дні (днів) |
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| RX3P12BATC16 |
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Виробник: Rohm Semiconductor
Description: PCH -100V -120A POWER MOSFET: RX
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
Description: PCH -100V -120A POWER MOSFET: RX
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
на замовлення 375 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 514.91 грн |
| 50+ | 270.58 грн |
| 100+ | 257.10 грн |