RXL035N03TCR Rohm Semiconductor

Description: NCH 30V 3..5A SMALL SIGNAL MOSFE, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Active, Supplier Device Package: TUMT6, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 910mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).