| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 18.77 грн |
| 25+ | 12.78 грн |
| 100+ | 7.04 грн |
| 1000+ | 3.66 грн |
| 3000+ | 3.04 грн |
| 9000+ | 2.35 грн |
| 24000+ | 2.28 грн |
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Технічний опис RYE002N05TCL ROHM Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V, Supplier Device Package: EMT3, Vgs(th) (Max) @ Id: 800mV @ 1mA, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Інші пропозиції RYE002N05TCL
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
RYE002N05TCL | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA EMT3Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: EMT3 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
товару немає в наявності |
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|
RYE002N05TCL | Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA EMT3Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Supplier Device Package: EMT3 Vgs(th) (Max) @ Id: 800mV @ 1mA Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| RYE002N05TCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CH 50V 200MA EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: EMT3
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RYE002N05TCL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA EMT3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Supplier Device Package: EMT3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 200MA EMT3
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
Supplier Device Package: EMT3
Vgs(th) (Max) @ Id: 800mV @ 1mA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.



