S10MC R7G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
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Технічний опис S10MC R7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AB (SMC), Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Technology: Standard, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AB, SMC, Packaging: Tape & Reel (TR).
Інші пропозиції S10MC R7G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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S10MC R7G | Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Current - Reverse Leakage @ Vr: 1 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AB (SMC) Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 60pF @ 4V, 1MHz Technology: Standard Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
S10MC R7G | Taiwan Semiconductor |
Rectifiers 10A, 1000V, Standard Recovery Rectifier |
товару немає в наявності |
В кошику од. на суму грн. |
| S10MC R7G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 10A DO214AB
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AB (SMC)
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Technology: Standard
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| S10MC R7G |
|
Виробник: Taiwan Semiconductor
Rectifiers 10A, 1000V, Standard Recovery Rectifier
Rectifiers 10A, 1000V, Standard Recovery Rectifier
товару немає в наявності
В кошику
од. на суму грн.