S1DHE3_A/H Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
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Технічний опис S1DHE3_A/H Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 12pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount.
Інші пропозиції S1DHE3_A/H за ціною від 4.37 грн до 31.08 грн
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S1DHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 200V 1A DO214AC Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 12pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
на замовлення 6326 шт: термін постачання 21-31 дні (днів) |
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S1DHE3_A/H | Vishay Semiconductors |
Rectifiers 1A 200V 40A@8.3ms Single Die Auto |
на замовлення 1315 шт: термін постачання 21-30 дні (днів) |
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| S1DHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 1A DO214AC
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
на замовлення 6326 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 15+ | 21.41 грн |
| 22+ | 14.20 грн |
| 100+ | 7.16 грн |
| 500+ | 5.48 грн |
| S1DHE3_A/H |
|
Виробник: Vishay Semiconductors
Rectifiers 1A 200V 40A@8.3ms Single Die Auto
Rectifiers 1A 200V 40A@8.3ms Single Die Auto
на замовлення 1315 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 11+ | 31.08 грн |
| 18+ | 19.05 грн |
| 100+ | 10.43 грн |
| 500+ | 7.82 грн |
| 1000+ | 5.64 грн |
| 1800+ | 5.00 грн |
| 3600+ | 4.37 грн |