S1FLK-GS08 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 10+ | 35.45 грн |
| 13+ | 26.55 грн |
| 100+ | 14.33 грн |
| 500+ | 9.94 грн |
| 1000+ | 7.58 грн |
| 2500+ | 6.81 грн |
| 5000+ | 6.33 грн |
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Технічний опис S1FLK-GS08 Vishay Semiconductors
Description: DIODE GP 800V 700MA DO219AB, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 700mA, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Інші пропозиції S1FLK-GS08
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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S1FLK-GS08 | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 800V 700MA DO219ABVoltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 700mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
товару немає в наявності |