S1FLM-GS18 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.83 грн |
| 20000+ | 3.36 грн |
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Технічний опис S1FLM-GS18 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-219AB (SMF), Current - Average Rectified (Io): 700mA, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-219AB, Packaging: Tape & Reel (TR).
Інші пропозиції S1FLM-GS18 за ціною від 3.62 грн до 24.24 грн
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S1FLM-GS18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 700MA DO219AB Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1000 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-219AB (SMF) Current - Average Rectified (Io): 700mA Capacitance @ Vr, F: 4pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-219AB Packaging: Cut Tape (CT) |
на замовлення 46899 шт: термін постачання 21-31 дні (днів) |
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S1FLM-GS18 | Vishay Semiconductors |
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3 |
на замовлення 49812 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| S1FLM-GS18 |
|
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1KV 700MA DO219AB
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 1.8 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
на замовлення 46899 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.24 грн |
| 19+ | 15.97 грн |
| 100+ | 8.05 грн |
| 500+ | 6.16 грн |
| 1000+ | 4.57 грн |
| 2000+ | 3.85 грн |
| 5000+ | 3.62 грн |
| S1FLM-GS18 |
|
Виробник: Vishay Semiconductors
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
Rectifiers GENPURP SWITCHING DIODESMFDO219ECO-e3
на замовлення 49812 шт:
термін постачання 21-30 дні (днів)