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S1JAL

S1JAL Taiwan Semiconductor Corporation


Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.23 грн
13+23.69 грн
100+13.44 грн
500+8.35 грн
1000+6.40 грн
2000+5.57 грн
5000+4.93 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
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Технічний опис S1JAL Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 1A THIN SMA, Package / Case: DO-221AC, SMA Flat Leads, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Thin SMA, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount.

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S1JAL S1JAL Taiwan Semiconductor Corporation Description: DIODE GEN PURP 600V 1A THIN SMA
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.
S1JAL
S1JAL
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A THIN SMA
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Thin SMA
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
товару немає в наявності
В кошику  од. на суму  грн.