S1M-M3/5AT Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7500+ | 2.92 грн |
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Технічний опис S1M-M3/5AT Vishay General Semiconductor - Diodes Division
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 1kV, Load current: 1A, Reverse recovery time: 1.8µs, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated; ultrafast switching, Case: DO214AC; SMA, Max. forward voltage: 1.1V, Leakage current: 50µA, Kind of package: 13 inch reel, Capacitance: 12pF, Quantity in set/package: 7500pcs., Max. forward impulse current: 30A, кількість в упаковці: 5 шт.
Інші пропозиції S1M-M3/5AT за ціною від 3.73 грн до 17.94 грн
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S1M-M3/5AT | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1KV 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 12pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 23252 шт: термін постачання 21-31 дні (днів) |
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S1M-M3/5AT | Виробник : Vishay General Semiconductor |
Rectifiers 1A, 1000V, STD, SM RECT |
на замовлення 25763 шт: термін постачання 21-30 дні (днів) |
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S1M-M3/5AT | Виробник : Vishay |
Diode Switching 1KV 1A 2-Pin SMA T/R |
товару немає в наявності |
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S1M-M3/5AT | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.1V Leakage current: 50µA Kind of package: 13 inch reel Capacitance: 12pF Quantity in set/package: 7500pcs. Max. forward impulse current: 30A кількість в упаковці: 5 шт |
товару немає в наявності |
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S1M-M3/5AT | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 1A; 1.8us; DO214AC,SMA; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.1V Leakage current: 50µA Kind of package: 13 inch reel Capacitance: 12pF Quantity in set/package: 7500pcs. Max. forward impulse current: 30A |
товару немає в наявності |