S1PKHM3/84A Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 17+ | 20.28 грн |
| 24+ | 13.57 грн |
| 100+ | 9.50 грн |
| 500+ | 7.05 грн |
| 1000+ | 6.21 грн |
| 3000+ | 4.54 грн |
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Технічний опис S1PKHM3/84A Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO220AA, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-220AA (SMP), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 6pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-220AA, Packaging: Tape & Reel (TR).
Інші пропозиції S1PKHM3/84A за ціною від 6.11 грн до 27.49 грн
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S1PKHM3/84A | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 1A DO220AAPackaging: Cut Tape (CT) Package / Case: DO-220AA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 6pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Qualification: AEC-Q101 |
на замовлення 2769 шт: термін постачання 21-31 дні (днів) |
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| S1PKHM3/84A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 1A DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 6pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Qualification: AEC-Q101
на замовлення 2769 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 27.49 грн |
| 17+ | 18.68 грн |
| 100+ | 9.45 грн |
| 500+ | 7.85 грн |
| 1000+ | 6.11 грн |