S1PKHM3/85A Vishay General Semiconductor
| Кількість | Ціна |
|---|---|
| 12+ | 28.02 грн |
| 17+ | 19.51 грн |
| 100+ | 10.54 грн |
| 500+ | 7.26 грн |
| 1000+ | 6.21 грн |
| 2500+ | 5.59 грн |
| 5000+ | 4.75 грн |
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Технічний опис S1PKHM3/85A Vishay General Semiconductor
Description: DIODE GEN PURP 800V 1A DO220AA, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 800 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-220AA (SMP), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 6pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.8 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-220AA, Packaging: Tape & Reel (TR).
Інші пропозиції S1PKHM3/85A
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S1PKHM3/85A | Виробник : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 1A DO220AAQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 800 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-220AA (SMP) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 6pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 1.8 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-220AA Packaging: Tape & Reel (TR) |
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