S29GL01GT10TFA010 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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Технічний опис S29GL01GT10TFA010 Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP, Packaging: Tray, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 1Gbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 56-TSOP, Grade: Automotive, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 128M x 8, DigiKey Programmable: Not Verified, Qualification: AEC-Q100.
Інші пропозиції S29GL01GT10TFA010
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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S29GL01GT10TFA010 | Виробник : Infineon Technologies |
NOR Flash Nor |
товару немає в наявності |
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| S29GL01GT10TFA010 | Виробник : INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 1GbFLASH; CFI,parallel; 100ns; TSOP56; parallel Operating temperature: -40...85°C Memory: 1Gb FLASH Type of integrated circuit: FLASH memory Kind of package: in-tray Kind of memory: NOR Kind of interface: parallel Mounting: SMD Application: automotive Interface: CFI; parallel Case: TSOP56 Access time: 100ns Operating voltage: 2.7...3.6V |
товару немає в наявності |