S29GL512S10DHI013 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Part Status: Active
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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Технічний опис S29GL512S10DHI013 Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA, Packaging: Tape & Reel (TR), Package / Case: 64-LBGA, Mounting Type: Surface Mount, Memory Size: 512Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR, Memory Format: FLASH, Supplier Device Package: 64-FBGA (9x9), Part Status: Active, Write Cycle Time - Word, Page: 60ns, Memory Interface: Parallel, Access Time: 100 ns, Memory Organization: 32M x 16, DigiKey Programmable: Not Verified.
Інші пропозиції S29GL512S10DHI013
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| S29GL512S10DHI013 | Виробник : Cypress Semiconductor |
NOR Flash Nor |
товару немає в наявності |
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| S29GL512S10DHI013 | Виробник : INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ. Description: IC: FLASH memory; 512MbFLASH; CFI,parallel; 100ns; BGA64; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Case: BGA64 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 100ns Output voltage: 2.7...3.6V DC Kind of package: reel; tape |
товару немає в наявності |