S2AHR5G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 50V 2A DO214AA, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 50 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AA (SMB), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AA, SMB, Packaging: Tape & Reel (TR).