S2M0120120K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 15A
Pulsed drain current: 66A
Power dissipation: 156W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 212mΩ
Mounting: THT
Gate charge: 29.6nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
кількість в упаковці: 1 шт
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Технічний опис S2M0120120K SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.3mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V.
Інші пропозиції S2M0120120K
| Фото | Назва | Виробник | Інформація |
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S2M0120120K | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 3.3mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V |
товару немає в наявності |
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S2M0120120K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 15A; Idm: 66A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 15A Pulsed drain current: 66A Power dissipation: 156W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 212mΩ Mounting: THT Gate charge: 29.6nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
товару немає в наявності |