S2M0160120K SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: THT
Case: TO247-4
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W
Drain-source voltage: 1.2kV
Drain current: 12A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: THT
Case: TO247-4
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 266.65 грн |
| 6+ | 155.64 грн |
| 17+ | 146.99 грн |
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Технічний опис S2M0160120K SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V.
Інші пропозиції S2M0160120K за ціною від 169.79 грн до 435.89 грн
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S2M0160120K | Виробник : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 40A; 130W Drain-source voltage: 1.2kV Drain current: 12A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 26.5nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 40A Mounting: THT Case: TO247-4 кількість в упаковці: 1 шт |
на замовлення 18 шт: термін постачання 14-21 дні (днів) |
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| S2M0160120K | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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