S3D12065G SMC Diode Solutions
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 35A D2PAK
Current - Reverse Leakage @ Vr: 16 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 35A
Capacitance @ Vr, F: 764pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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Технічний опис S3D12065G SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 35A D2PAK, Current - Reverse Leakage @ Vr: 16 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: D2PAK, Current - Average Rectified (Io): 35A, Capacitance @ Vr, F: 764pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції S3D12065G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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S3D12065G | SMC Diode Solutions |
Description: DIODE SIL CARBIDE 650V 35A D2PAK Current - Reverse Leakage @ Vr: 16 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: D2PAK Current - Average Rectified (Io): 35A Capacitance @ Vr, F: 764pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. |
| S3D12065G |
|
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 35A D2PAK
Current - Reverse Leakage @ Vr: 16 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 35A
Capacitance @ Vr, F: 764pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 650V 35A D2PAK
Current - Reverse Leakage @ Vr: 16 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
Current - Average Rectified (Io): 35A
Capacitance @ Vr, F: 764pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.