S3GHE3_A/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes DivisionDescription: DIODE STANDARD 400V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 24500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3500+ | 11.97 грн |
| 7000+ | 9.73 грн |
| 10500+ | 9.70 грн |
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Технічний опис S3GHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Qualification: AEC-Q101.
Інші пропозиції S3GHE3_A/I за ціною від 12.92 грн до 47.42 грн
| Фото | Назва | Виробник | Інформація |
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S3GHE3_A/I | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 2.5us; DO214AB,SMC; Ufmax: 1.15V Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 100A Semiconductor structure: single diode Case: DO214AB; SMC Mounting: SMD Leakage current: 0.25mA Kind of package: 13 inch reel Max. forward voltage: 1.15V Quantity in set/package: 3500pcs. Features of semiconductor devices: glass passivated Capacitance: 60pF Reverse recovery time: 2.5µs Load current: 3A |
на замовлення 3500 шт: термін постачання 21-30 дні (днів) |
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S3GHE3_A/I | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Qualification: AEC-Q101 |
на замовлення 24500 шт: термін постачання 21-31 дні (днів) |
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S3GHE3_A/I | Виробник : Vishay General Semiconductor |
Rectifiers 3A 400V 100A@8.3ms Single Die Auto |
на замовлення 2631 шт: термін постачання 21-30 дні (днів) |
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S3GHE3_A/I | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 3A; 2.5us; DO214AB,SMC; Ufmax: 1.15V Type of diode: rectifying Max. off-state voltage: 0.4kV Max. forward impulse current: 100A Semiconductor structure: single diode Case: DO214AB; SMC Mounting: SMD Leakage current: 0.25mA Kind of package: 13 inch reel Max. forward voltage: 1.15V Quantity in set/package: 3500pcs. Features of semiconductor devices: glass passivated Capacitance: 60pF Reverse recovery time: 2.5µs Load current: 3A кількість в упаковці: 1 шт |
на замовлення 3500 шт: термін постачання 14-21 дні (днів) |
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