S3M0025120T SMC DIODE SOLUTIONS
Виробник: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 517W
Case: TOLL
Gate-source voltage: -4...18V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 175nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 544.18 грн |
| 3+ | 417.64 грн |
| 7+ | 394.53 грн |
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Технічний опис S3M0025120T SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V, Power Dissipation (Max): 517W (Tc), Vgs(th) (Max) @ Id: 4V @ 20mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V.
Інші пропозиції S3M0025120T за ціною від 455.26 грн до 653.02 грн
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S3M0025120T | Виробник : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 54A Pulsed drain current: 200A Power dissipation: 517W Case: TOLL Gate-source voltage: -4...18V On-state resistance: 36mΩ Mounting: SMD Gate charge: 175nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC кількість в упаковці: 1 шт |
на замовлення 20 шт: термін постачання 14-21 дні (днів) |
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| S3M0025120T | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V |
товару немає в наявності |
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| S3M0025120T | Виробник : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V |
товару немає в наявності |