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S3M0040120J-A SMC DIODE SOLUTIONS

Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W
Case: D2PAK-7
Mounting: SMD
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 600W
Polarisation: unipolar
Features of semiconductor devices: Kelvin terminal
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
кількість в упаковці: 1 шт

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Технічний опис S3M0040120J-A SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W, Case: D2PAK-7, Mounting: SMD, Kind of package: tube, Drain-source voltage: 1.2kV, Drain current: 54A, On-state resistance: 50mΩ, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 600W, Polarisation: unipolar, Features of semiconductor devices: Kelvin terminal, Gate charge: 143nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 223A, кількість в упаковці: 1 шт.

Інші пропозиції S3M0040120J-A

Назва	Виробник	Інформація	Доступність	Ціна
S3M0040120J-A	Виробник : SMC DIODE SOLUTIONS	Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W Case: D2PAK-7 Mounting: SMD Kind of package: tube Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 600W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
S3M0040120J-A	Виробник : SMC DIODE SOLUTIONS	Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W Case: D2PAK-7 Mounting: SMD Kind of package: tube Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 600W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A	товару немає в наявності	В кошику од. на суму грн.
S3M0040120J-A	Виробник : SMC DIODE SOLUTIONS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 223A; 600W Case: D2PAK-7 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 50mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 600W Polarisation: unipolar Features of semiconductor devices: Kelvin terminal Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A	товару немає в наявності	В кошику од. на суму грн.