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S3M0040120T SMC Diode Solutions

Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V

на замовлення 250 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
1+	1009.88 грн
10+	680.43 грн
100+	515.25 грн

В кошику од. на суму грн.

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Технічний опис S3M0040120T SMC Diode Solutions

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 16mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V.

Інші пропозиції S3M0040120T

Назва	Виробник	Інформація	Доступність	Ціна
S3M0040120T	Виробник : SMC DIODE SOLUTIONS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 223A Power dissipation: 130W Case: TOLL Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
S3M0040120T	Виробник : SMC Diode Solutions	Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V	товару немає в наявності	В кошику од. на суму грн.
S3M0040120T	Виробник : SMC DIODE SOLUTIONS	Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 46A Pulsed drain current: 223A Power dissipation: 130W Case: TOLL Gate-source voltage: -4...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 143nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC	товару немає в наявності	В кошику од. на суму грн.