S4D02120E SMC Diode Solutions
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 1200V 2A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис S4D02120E SMC Diode Solutions
Description: DIODE SIL CARBIDE 1200V 2A DPAK, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: DPAK, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 116pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції S4D02120E за ціною від 55.02 грн до 174.39 грн
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S4D02120E | SMC Diode Solutions |
Description: DIODE SIL CARBIDE 1200V 2A DPAK Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: DPAK Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 116pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
на замовлення 6717 шт: термін постачання 21-31 дні (днів) |
|
| S4D02120E |
|
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 1200V 2A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARBIDE 1200V 2A DPAK
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DPAK
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 116pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 6717 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 174.39 грн |
| 10+ | 107.72 грн |
| 100+ | 73.71 грн |
| 500+ | 55.51 грн |
| 1000+ | 55.02 грн |