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S4D02120F

S4D02120F SMC Diode Solutions

S4D02120A%20S4D02120E%20S4D02120F%20N2369%20REV.F.pdf
Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 1.2KV 9A ITO220AC
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 160pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Packaging: Tube
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: ITO-220AC
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Технічний опис S4D02120F SMC Diode Solutions

Description: DIODE SIL CARB 1.2KV 9A ITO220AC, Current - Average Rectified (Io): 9A, Capacitance @ Vr, F: 160pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2 Full Pack, Isolated Tab, Packaging: Tube, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: ITO-220AC.