Технічний опис S4D05120E1 SMC DIODE SOLUTIONS
Description: DIODE SCHOTTKY 1200V 5A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 302pF @ 0V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DPAK, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Інші пропозиції S4D05120E1
| Фото | Назва | Виробник | Інформація |
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S4D05120E1 | Виробник : SMC Diode Solutions |
 Description: DIODE SCHOTTKY 1200V 5A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |
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S4D05120E1 | Виробник : SMC Diode Solutions |
Description: DIODE SCHOTTKY 1200V 5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 302pF @ 0V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
товару немає в наявності |