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S4D20120G

S4D20120G SMC Diode Solutions

S4D20120A%20S4D20120H%20S4D20120G%20N2367%20REV.G.pdf
Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 1200V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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Технічний опис S4D20120G SMC Diode Solutions

Description: DIODE SIL CARB 1200V 20A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 721pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: D2PAK, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.

Інші пропозиції S4D20120G

Фото Назва Виробник Інформація Доступність Ціна
S4D20120G S4D20120G SMC Diode Solutions S4D20120A%20S4D20120H%20S4D20120G%20N2367%20REV.G.pdf Description: DIODE SIL CARB 1200V 20A D2PAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
товару немає в наявності
В кошику  од. на суму  грн.
S4D20120G S4D20120A%20S4D20120H%20S4D20120G%20N2367%20REV.G.pdf
S4D20120G
Виробник: SMC Diode Solutions
Description: DIODE SIL CARB 1200V 20A D2PAK
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 721pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: D2PAK
товару немає в наявності
В кошику  од. на суму  грн.