S8CQHM3/I Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 8A, 1200V, STANDARD R
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 104.68 грн |
| 10+ | 63.60 грн |
| 100+ | 42.26 грн |
| 500+ | 31.07 грн |
| 1000+ | 28.30 грн |
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Технічний опис S8CQHM3/I Vishay General Semiconductor - Diodes Division
Description: RECTIFIER, 8A, 1200V, STANDARD R, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Standard, Capacitance @ Vr, F: 79pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.6A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V, Qualification: AEC-Q101.
