
S8JCHR7G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Технічний опис S8JCHR7G Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 8A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 48pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Інші пропозиції S8JCHR7G
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S8JCHR7G | Виробник : Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 48pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
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S8JCHR7G | Виробник : Taiwan Semiconductor |
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