SA2M-M3/61T Vishay Semiconductors

Description: DIODE GEN PURP 1KV 2A DO214AC, Current - Reverse Leakage @ Vr: 3 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-214AC (SMA), Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 11pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 1.5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214AC, SMA, Packaging: Tape & Reel (TR).