SB3H100-E3/73 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO201AD
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 20 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-201AD
Current - Average Rectified (Io): 3A
Technology: Schottky
| Кількість | Ціна |
|---|---|
| 6+ | 53.20 грн |
| 10+ | 33.98 грн |
| 100+ | 22.81 грн |
| 500+ | 17.05 грн |
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Технічний опис SB3H100-E3/73 Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 3A DO201AD, Current - Reverse Leakage @ Vr: 20 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Box (TB).
Інші пропозиції SB3H100-E3/73
| Фото | Назва | Виробник | Інформація |
Доступність |
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SB3H100-E3/73 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 3A DO201AD Current - Reverse Leakage @ Vr: 20 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: DO-201AD Current - Average Rectified (Io): 3A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AD, Axial Packaging: Tape & Box (TB) |
товару немає в наявності |
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SB3H100-E3/73 | Виробник : Vishay Semiconductors |
Schottky Diodes & Rectifiers 100 Volt 3.0 Amp 100 Amp IFSM |
товару немає в наявності |