SBAS116LT1G onsemi
Виробник: onsemi
Description: DIODE GEN PURP 75V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 75V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Qualification: AEC-Q101
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 1.67 грн |
6000+ | 1.52 грн |
9000+ | 1.3 грн |
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Технічний опис SBAS116LT1G onsemi
Description: DIODE GEN PURP 75V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3 µs, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23-3 (TO-236), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 75 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 5 nA @ 75 V, Qualification: AEC-Q101.
Інші пропозиції SBAS116LT1G за ціною від 1.83 грн до 28.97 грн
Фото | Назва | Виробник | Інформація |
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SBAS116LT1G | Виробник : ONSEMI |
Description: ONSEMI - SBAS116LT1G - Kleinsignaldiode, Einfach, 75 V, 200 mA, 1.25 V, 3 µs, 500 mA tariffCode: 85411000 Bauform - Diode: SOT-23 Durchlassstoßstrom: 500mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 3µs usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 75V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C |
на замовлення 19739 шт: термін постачання 21-31 дні (днів) |
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SBAS116LT1G | Виробник : onsemi |
Description: DIODE GEN PURP 75V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3 µs Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V Qualification: AEC-Q101 |
на замовлення 28925 шт: термін постачання 21-31 дні (днів) |
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SBAS116LT1G | Виробник : ONSEMI |
Description: ONSEMI - SBAS116LT1G - Kleinsignaldiode, Einfach, 75 V, 200 mA, 1.25 V, 3 µs, 500 mA tariffCode: 85411000 Bauform - Diode: SOT-23 Durchlassstoßstrom: 500mA rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: AEC-Q101 Durchlassspannung, max.: 1.25V Sperrverzögerungszeit: 3µs usEccn: EAR99 Durchschnittlicher Durchlassstrom: 200mA euEccn: NLR Wiederkehrende Spitzensperrspannung: 75V Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C |
на замовлення 19739 шт: термін постачання 21-31 дні (днів) |
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SBAS116LT1G | Виробник : onsemi | Diodes - General Purpose, Power, Switching SS SWCH DIO 75V T |
на замовлення 14245 шт: термін постачання 21-30 дні (днів) |
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SBAS116LT1G | Виробник : ONSEMI |
Description: ONSEMI - SBAS116LT1G - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
на замовлення 275345 шт: термін постачання 21-31 дні (днів) |
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SBAS116LT1G | Виробник : ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry кількість в упаковці: 3000 шт |
товар відсутній |
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SBAS116LT1G | Виробник : ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 75V; 200mA; 3us; SOT23; Ufmax: 1.25V; Ir: 80nA Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.2A Reverse recovery time: 3µs Semiconductor structure: single diode Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 80nA Power dissipation: 0.225W Kind of package: reel; tape Application: automotive industry |
товар відсутній |