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SBC808-25LT1G

SBC808-25LT1G onsemi

BC808-25LT1-D.PDF Виробник: onsemi
Description: SBC808-25 - PNP BIPOLAR TRANSIST
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
7552+2.64 грн
Мінімальне замовлення: 7552
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Технічний опис SBC808-25LT1G onsemi

Description: SBC808-25 - PNP BIPOLAR TRANSIST, Packaging: Bulk, Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 25 V, Power - Max: 300 mW, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції SBC808-25LT1G

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
SBC808-25LT1G Виробник : ON Semiconductor BC808-25LT1-D.PDF bc808-25lt1-d.pdf
на замовлення 3000 шт:
термін постачання 14-28 дні (днів)
SBC808-25LT1G SBC808-25LT1G Виробник : onsemi bc808-25lt1-d.pdf Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
товар відсутній
SBC808-25LT1G SBC808-25LT1G Виробник : onsemi bc808-25lt1-d.pdf Description: TRANS PNP 25V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
товар відсутній
SBC808-25LT1G SBC808-25LT1G Виробник : onsemi BC808_25LT1_D-2310031.pdf Bipolar Transistors - BJT SS GP XSTR SPCL TR
товар відсутній