SBR0240LPWQ-7B Diodes Incorporated
Виробник: Diodes Incorporated
Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 10000+ | 3.42 грн |
| 20000+ | 3.26 грн |
| 30000+ | 3.14 грн |
| 50000+ | 2.79 грн |
| 100000+ | 2.69 грн |
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Технічний опис SBR0240LPWQ-7B Diodes Incorporated
Description: DIODE SBR 40V 200MA X1DFN10062, Packaging: Tape & Reel (TR), Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 3.8 ns, Technology: Super Barrier, Capacitance @ Vr, F: 8pF @ 5V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: X1-DFN1006-2, Operating Temperature - Junction: -65°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA, Current - Reverse Leakage @ Vr: 10 µA @ 40 V, Qualification: AEC-Q101.
Інші пропозиції SBR0240LPWQ-7B за ціною від 3.96 грн до 15.50 грн
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SBR0240LPWQ-7B | Diodes Incorporated |
Description: DIODE SBR 40V 200MA X1DFN10062 Packaging: Cut Tape (CT) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3.8 ns Technology: Super Barrier Capacitance @ Vr, F: 8pF @ 5V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: X1-DFN1006-2 Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V Qualification: AEC-Q101 |
на замовлення 310000 шт: термін постачання 21-31 дні (днів) |
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SBR0240LPWQ-7B | Diodes Incorporated |
Schottky Diodes & Rectifiers SBR Diode X1-DFN1006-2/SWP T&R 10K |
на замовлення 6857 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. |
| SBR0240LPWQ-7B |
|
Виробник: Diodes Incorporated
Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SBR 40V 200MA X1DFN10062
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3.8 ns
Technology: Super Barrier
Capacitance @ Vr, F: 8pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: X1-DFN1006-2
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Qualification: AEC-Q101
на замовлення 310000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 15.50 грн |
| 30+ | 10.07 грн |
| 100+ | 8.39 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.01 грн |
| 2000+ | 4.62 грн |
| 5000+ | 3.96 грн |
| SBR0240LPWQ-7B |
|
Виробник: Diodes Incorporated
Schottky Diodes & Rectifiers SBR Diode X1-DFN1006-2/SWP T&R 10K
Schottky Diodes & Rectifiers SBR Diode X1-DFN1006-2/SWP T&R 10K
на замовлення 6857 шт:
термін постачання 21-30 дні (днів)