SBR1U30CSP-7 Diodes Incorporated
Виробник: Diodes Incorporated
Description: DIODE SBR 30V 1A X2-WLB1406-2
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: X2-WLB1406-2
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Super Barrier
Відгуки про товар
Написати відгук
Технічний опис SBR1U30CSP-7 Diodes Incorporated
Description: DIODE SBR 30V 1A X2-WLB1406-2, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: 2-XDFN, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 75 µA @ 30 V, Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 30 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: X2-WLB1406-2, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Super Barrier.
Інші пропозиції SBR1U30CSP-7
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
SBR1U30CSP-7 | Diodes Incorporated |
Description: DIODE SBR 30V 1A X2-WLB1406-2 Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Super Barrier Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: X2-WLB1406-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A Current - Reverse Leakage @ Vr: 75 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. |
| SBR1U30CSP-7 |
|
Виробник: Diodes Incorporated
Description: DIODE SBR 30V 1A X2-WLB1406-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: X2-WLB1406-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
Description: DIODE SBR 30V 1A X2-WLB1406-2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Super Barrier
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: X2-WLB1406-2
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.