
SBS811-TL-E onsemi

Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-VEC
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A
Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис SBS811-TL-E onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8VEC, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 2A, Supplier Device Package: 8-VEC, Operating Temperature - Junction: -55°C ~ 125°C, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A, Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V.
Інші пропозиції SBS811-TL-E
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
---|---|---|---|---|---|
![]() |
SBS811-TL-E | Виробник : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: 8-VEC Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 400 mV @ 2 A Current - Reverse Leakage @ Vr: 1.25 mA @ 15 V |
товару немає в наявності |