SBSP52T1G onsemi
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 1000+ | 13.21 грн |
| 2000+ | 11.51 грн |
| 3000+ | 10.90 грн |
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Технічний опис SBSP52T1G onsemi
Description: TRANS NPN DARL 80V 1A SOT223, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: SOT-223 (TO-261), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V, Current - Collector Cutoff (Max): 10µA, Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SBSP52T1G за ціною від 11.74 грн до 53.32 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SBSP52T1G | onsemi |
Description: TRANS NPN DARL 80V 1A SOT223 Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 1 A Part Status: Active Supplier Device Package: SOT-223 (TO-261) DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Current - Collector Cutoff (Max): 10µA Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4567 шт: термін постачання 21-31 дні (днів) |
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| SBSP52T1G | onsemi |
Darlington Transistors SS SOT223 DL XSTR NPN 80V |
на замовлення 13718 шт: термін постачання 21-30 дні (днів) |
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| SBSP52T1G | ONN |
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на замовлення 7000 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| SBSP52T1G |
|
Виробник: onsemi
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS NPN DARL 80V 1A SOT223
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: SOT-223 (TO-261)
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 1.3V @ 500µA, 500mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4567 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 48.93 грн |
| 11+ | 28.94 грн |
| 100+ | 18.61 грн |
| 500+ | 13.28 грн |