Технічний опис SCH2080KEC ROHM Semiconductor
Description: SICFET N-CH 1200V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V, Power Dissipation (Max): 262W (Tc), Vgs(th) (Max) @ Id: 4V @ 4.4mA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -6V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 800 V.
Інші пропозиції SCH2080KEC
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SCH2080KEC | Виробник : Rohm Semiconductor |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Power Dissipation (Max): 262W (Tc) Vgs(th) (Max) @ Id: 4V @ 4.4mA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -6V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 800 V |
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