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Технічний опис SCH2080KEC ROHM Semiconductor
Description: SICFET N-CH 1200V 40A TO247, Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +22V, -6V, Drive Voltage (Max Rds On, Min Rds On): 18V, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4V @ 4.4mA, Power Dissipation (Max): 262W (Tc), Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCH2080KEC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SCH2080KEC | Rohm Semiconductor |
 Description: SICFET N-CH 1200V 40A TO247Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -6V Drive Voltage (Max Rds On, Min Rds On): 18V Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4V @ 4.4mA Power Dissipation (Max): 262W (Tc) Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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В кошику од. на суму грн. |
| SCH2080KEC |
|
Виробник: Rohm Semiconductor
Description: SICFET N-CH 1200V 40A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Power Dissipation (Max): 262W (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 40A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -6V
Drive Voltage (Max Rds On, Min Rds On): 18V
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4V @ 4.4mA
Power Dissipation (Max): 262W (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 10A, 18V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.