Інші пропозиції SCS106AGC
| Фото | Назва | Виробник | Інформація |
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SCS106AGC | Виробник : ROHM SEMICONDUCTOR |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Max. load current: 29A Power dissipation: 65W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: max. 1.27mm Max. forward impulse current: 86A Max. forward voltage: 1.7V кількість в упаковці: 1 шт |
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SCS106AGC | Виробник : Rohm Semiconductor |
Description: DIODE SIL CARB 600V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 6 A Current - Reverse Leakage @ Vr: 120 µA @ 600 V |
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SCS106AGC | Виробник : ROHM Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 6A |
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SCS106AGC | Виробник : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; 65W; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Max. load current: 29A Power dissipation: 65W Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: max. 1.27mm Max. forward impulse current: 86A Max. forward voltage: 1.7V |
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