SCS110AGC Rohm Semiconductor
Виробник: Rohm Semiconductor
Description: DIODE SIL CARB 600V 10A TO220AC
Current - Reverse Leakage @ Vr: 200 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 430pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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Технічний опис SCS110AGC Rohm Semiconductor
Description: DIODE SIL CARB 600V 10A TO220AC, Current - Reverse Leakage @ Vr: 200 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: 175°C (Max), Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 430pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.
Інші пропозиції SCS110AGC
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SCS110AGC | ROHM Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 10A |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
 |
SCS110AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 42A Max. forward impulse current: 160A Power dissipation: 83W Kind of package: tube Heatsink thickness: max. 1.27mm |
товару немає в наявності |
В кошику од. на суму грн. |
| SCS110AGC |
|
Виробник: ROHM Semiconductor
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 10A
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 10A
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SCS110AGC |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 42A
Max. forward impulse current: 160A
Power dissipation: 83W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 42A
Max. forward impulse current: 160A
Power dissipation: 83W
Kind of package: tube
Heatsink thickness: max. 1.27mm
товару немає в наявності
В кошику
од. на суму грн.