Технічний опис SCS110AGC ROHM SEMICONDUCTOR
Description: DIODE SIL CARB 600V 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 430pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.
Інші пропозиції SCS110AGC
| Фото | Назва | Виробник | Інформація |
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SCS110AGC | Виробник : Rohm Semiconductor |
 Description: DIODE SIL CARB 600V 10A TO220ACPackaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 430pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 200 µA @ 600 V |
товару немає в наявності |
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SCS110AGC | Виробник : ROHM Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 10A |
товару немає в наявності |