SCS112AGC Rohm Semiconductor
Виробник: Rohm SemiconductorDescription: DIODE SIL CARB 600V 12A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 516pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
Current - Reverse Leakage @ Vr: 240 µA @ 600 V
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Технічний опис SCS112AGC Rohm Semiconductor
Description: DIODE SIL CARB 600V 12A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 516pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: 175°C (Max), Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A, Current - Reverse Leakage @ Vr: 240 µA @ 600 V.
Інші пропозиції SCS112AGC
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SCS112AGC | Виробник : ROHM Semiconductor |
Schottky Diodes & Rectifiers SiC Schottky Barrier Diode; 600V, 12A |
товару немає в наявності |
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SCS112AGC | Виробник : ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 167A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 93W Max. load current: 48A |
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