SCS215AEGC11 ROHM Semiconductor
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 598.41 грн |
| 10+ | 338.99 грн |
| 100+ | 252.66 грн |
| 450+ | 241.62 грн |
| 900+ | 240.93 грн |
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Технічний опис SCS215AEGC11 ROHM Semiconductor
Description: DIODE SIL CARBIDE 650V 15A TO247, Current - Reverse Leakage @ Vr: 300 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: TO-247, Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 550pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції SCS215AEGC11 за ціною від 356.14 грн до 640.72 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||
|---|---|---|---|---|---|---|---|---|---|
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SCS215AEGC11 | Rohm Semiconductor |
 Description: DIODE SIL CARBIDE 650V 15A TO247Current - Reverse Leakage @ Vr: 300 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io): 15A Capacitance @ Vr, F: 550pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 109 шт: термін постачання 21-31 дні (днів) |
|
| SCS215AEGC11 |
|
Виробник: Rohm Semiconductor
Description: DIODE SIL CARBIDE 650V 15A TO247
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARBIDE 650V 15A TO247
Current - Reverse Leakage @ Vr: 300 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 550pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 640.72 грн |
| 30+ | 356.14 грн |